Towards flexible asymmetric MSM structures using Si microwires through contact printing

This paper presents development of flexible metal-semiconductor-metal devices using silicon (Si) microwires. Monocrystalline Si in the shape of microwires are used which are developed through standard photolithography and etching. These microwires are assembled on secondary flexible substrates through a dry transfer printing by using a polydimethylsiloxane stamp. The conductive patterns on Si microwires are printed using a colloidal silver nanoparticles based solution and an organic conductor i.e. poly (3,4-ethylene dioxthiophene) doped with poly (styrene sulfonate). A custom developed spray coating technique is used for conductive patterns on Si microwires. A comparative study of the current–voltage (I–V) responses is carried out in flat and bent orientations as well as the response to the light illumination of the wires is explored. Current variations as high as 17.1 μA are recorded going from flat to bend conditions, while the highest I on/I off ratio i.e. 43.8 is achieved with light illuminations. The abrupt changes in the current response due to light-on/off conditions validates these devices for fast flexible photodetector switches. These devices are also evaluated based on transfer procedure i.e. flip-over and stamp-assisted transfer printing for manipulating Si microwires and their subsequent post-processing. These new developments were made to study the most feasible approach for transfer printing of Si microwires and to harvest their capabilities such as photodetection and several other applications in the shape of metal-semiconductor-metal structures

Graphene Gold Nanoparticle Hybrid Based Near Infrared Photodetector

This paper presents novel and simplistic approach towards the development of graphene based near infrared (NIR) photodetectors. The developed device comprises of Au nanoparticles integrated within the channel of the back-gated graphene field effect transistors. The introduction of Au nanoparticles enhanced response of the device under IR illumination due improved NIR absorption. Further, dynamic response of the device under IR illumination is presented. This study will trigger the development of novel hybrid graphene device for graphene based photodetectors in IR regime

Tuning Electrical Conductivity of CNT-PDMS Nanocomposites for Flexible Electronic Applications

This paper presents a study into the electrical conductivity of multi-wall carbon nanotube-polydimethylsiloxane (MWNT-PDMS) nanocomposite and their dependence on the filler concentration. It is observed that the electrical conductivity of the composites can be tailored by altering the filler concentration. Accordingly, the nanocomposites with filler weight ratio ranging from 1% to 8% were prepared and tested. Finally, the significance of results presented here for flexible pressure sensors and stretchable interconnects for electronic skin applications have been discussed

Local dynamics of topological magnetic defects in the itinerant helimagnet FeGe

Chiral magnetic interactions induce complex spin textures including helical and conical spin waves, as well as particle-like objects such as magnetic skyrmions and merons. These spin textures are the basis for innovative device paradigms and give rise to exotic topological phenomena, thus being of interest for both applied and fundamental sciences. Present key questions address the dynamics of the spin system and emergent topological defects. Here we analyze the micromagnetic dynamics in the helimagnetic phase of FeGe. By combining magnetic force microscopy, single-spin magnetometry, and Landau-Lifschitz-Gilbert simulations we show that the nanoscale dynamics are governed by the depinning and subsequent motion of magnetic edge dislocations. The motion of these topologically stable objects triggers perturbations that can propagate over mesoscopic length scales. The observation of stochastic instabilities in the micromagnetic structure provides new insight to the spatio-temporal dynamics of itinerant helimagnets and topological defects, and discloses novel challenges regarding their technological usage

Temperature dependence of photoluminescence intensity and spin contrast in nitrogen-vacancy centers

We report on measurements of the photoluminescence (PL) properties of single nitrogen-vacancy (NV) centers in diamond at temperatures between 4-300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10-100 K that recovers to high levels below and above. Further, we find a rich dependence on magnetic bias field and crystal strain. We develop a comprehensive model based on spin mixing and orbital hopping in the electronic excited state that quantitatively explains the observations. Beyond a more complete understanding of the excited-state dynamics, our work provides a novel approach for probing electron-phonon interactions and a predictive tool for optimizing experimental conditions for quantum applications.Comment: Companion paper: arXiv:2304.02521 | Model: https://github.com/sernstETH/nvratemode

Development of multi-depth probing 3D microelectrode array to record electrophysiological activity within neural cultures

Microelectrode arrays (MEAs) play a crucial role in investigating the electrophysiological activities of neuronal populations. Although two-dimensional neuronal cell cultures have predominated in neurophysiology in monitoring in-vitro the electrophysiological activity, recent research shifted toward culture using three-dimensional (3D) neuronal network structures for developing more sophisticated and realistic neuronal models. Nevertheless, many challenges remain in the electrophysiological analysis of 3D neuron cultures, among them the development of robust platforms for investigating the electrophysiological signal at multiple depths of the 3D neurons’ networks. While various 3D MEAs have been developed to probe specific depths within the layered nervous system, the fabrication of microelectrodes with different heights, capable of probing neural activity from the surface as well as from the different layers within the neural construct, remains challenging. This study presents a novel 3D MEA with microelectrodes of different heights, realized through a multi-stage mold-assisted electrodeposition process. Our pioneering platform allows meticulous control over the height of individual microelectrodes as well as the array topology, paving the way for the fabrication of 3D MEAs consisting of electrodes with multiple heights that could be tailored for specific applications and experiments. The device performance was characterized by measuring electrochemical impedance, and noise, and capturing spontaneous electrophysiological activity from neurospheroids derived from human induced pluripotent stem cells. These evaluations unequivocally validated the significant potential of our innovative multi-height 3D MEA as an avant-garde platform for in vitro 3D neuronal studies

An enhanced platform for cell electroporation: controlled delivery and electrodes functionalization

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Ultra-thin chips for high-performance flexible electronics

Flexible electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance electronics has also increased because flexible and compact integrated circuits are needed to obtain fully flexible electronic systems. It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of flexible electronics